Inorganic Materials Chemistry

Our group focuses on the development, synthesis and evaluation of high-performance precursors for vapor phase deposition processes namely chemical vapor deposition (CVD), atomic layer deposition (ALD) and molecular layer deposition (MLD).

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An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

Inorganic Materials Chemistry

Plasma for Materials / Surfaces

An efficient plasma-enhanced atomic layer deposition (PE-ALD) process was developed for TiO2 thin films of high quality, using a new Ti-precursor, namely tris(dimethylamido)-(dimethylamino-2-propanolato)titanium(IV) (TDMADT). The five-coordinated...

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Inorganic Materials Chemistry

An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor