Inorganic Materials Chemistry

Our group focuses on the development, synthesis and evaluation of high-performance precursors for vapor phase deposition processes namely chemical vapor deposition (CVD), atomic layer deposition (ALD) and molecular layer deposition (MLD).

Date Changed

Format

Displaying 1 - 3 of 3 datasets

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

Inorganic Materials Chemistry

Plasma for Materials / Surfaces

Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The...

html

An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

Inorganic Materials Chemistry

Plasma for Materials / Surfaces

An efficient plasma-enhanced atomic layer deposition (PE-ALD) process was developed for TiO2 thin films of high quality, using a new Ti-precursor, namely tris(dimethylamido)-(dimethylamino-2-propanolato)titanium(IV) (TDMADT). The five-coordinated...

html

Unearthing [3‐(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al2O3: Synthesis, Characterization and ALD Process Development

Inorganic Materials Chemistry

Plasma for Materials / Surfaces

html

Date Changed

Tags

Format